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Ambient Temperature Effects on the Performance of A1GaN/GaN Heterostructure Field-effect Transistors
Language: en
Pages: 138

Ambient Temperature Effects on the Performance of A1GaN/GaN Heterostructure Field-effect Transistors

Authors: Yang-An Tan
Categories: Microwave devices
Type: BOOK - Published: 2007 - Publisher:

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The Effects of Temperature and Electron Radiation on the Electrical Properties of A1GaN/GaN Heterostructure Field Effect Transistors
Language: en
Pages: 104

The Effects of Temperature and Electron Radiation on the Electrical Properties of A1GaN/GaN Heterostructure Field Effect Transistors

Authors: Jeffrey T. Moran
Categories: Field-effect transistors
Type: BOOK - Published: 2009 - Publisher:

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GaN heterostructure field effect transistors
Language: en
Pages:

GaN heterostructure field effect transistors

Authors:
Categories:
Type: BOOK - Published: 1910 - Publisher:

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A summary of the performance of AlGaN/GaN heterostructure field effect transistors on sapphire and SiC substrates are presented. High total power have been demo
HEMT Technology and Applications
Language: en
Pages: 246

HEMT Technology and Applications

Authors: Trupti Ranjan Lenka
Categories: Technology & Engineering
Type: BOOK - Published: 2022-06-23 - Publisher: Springer Nature

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This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling an
Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors
Language: en
Pages:

Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors

Authors:
Categories:
Type: BOOK - Published: 1999 - Publisher:

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