Operation of SiGe BiCMOS Technology Under Extreme Environments Tianbing Chen 96 pages Directed by Dr. John D. Cressler "Extreme environment electronics" represe
SiGe BiCMOS technology has many advantageous properties that, when leveraged, enable circuit design for extreme environments. This work will focus on designs ta
The objective of this work is to investigate the suitability of applying silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) bipolar complementary
The objective of this work is to investigate the performance of SiGe HBTs and scaled CMOS devices in extreme environments. In this work, the inverse mode operat
Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. Th