Find (PDF) Si Atomic Layer Epitaxy Based On Si2h6 And Remote He Plasma Bombardment for Read Full

Language: en
Pages: 19

Si Atomic Layer Epitaxy Based on Si2H6 and Remote He Plasma Bombardment

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Type: BOOK - Published: 1992 - Publisher:

Atomic layer Epitaxy (ALE) of Si has been demonstrated by using remote He plasma low energy ion bombardment to desorb H from a H-passivated Si(100) surface at l

Language: en
Pages: 3

Si Atomic Layer Epitaxy Using Remote Plasma Assisted Hydrogen Desorption and Disilane as a Precursor

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Type: BOOK - Published: 1992 - Publisher:

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We have demonstrated silicon Atomic Layer Epitaxy(ALE) using ions from an rf-excited helium plasma glow discharge which held remote from the substrate in a Remo

Language: en
Pages: 274

Atomic Layer Deposition

Authors: Tommi Kääriäinen

Categories: Technology & Engineering

Type: BOOK - Published: 2013-05-17 - Publisher: John Wiley & Sons

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Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new