Ambient Temperature Effects on the Performance of A1GaN/GaN Heterostructure Field-effect Transistors

Ambient Temperature Effects on the Performance of A1GaN/GaN Heterostructure Field-effect Transistors
Author :
Publisher :
Total Pages : 138
Release :
ISBN-10 : UCR:31210021706393
ISBN-13 :
Rating : 4/5 ( Downloads)

Book Synopsis Ambient Temperature Effects on the Performance of A1GaN/GaN Heterostructure Field-effect Transistors by : Yang-An Tan

Download or read book Ambient Temperature Effects on the Performance of A1GaN/GaN Heterostructure Field-effect Transistors written by Yang-An Tan and published by . This book was released on 2007 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:


Ambient Temperature Effects on the Performance of A1GaN/GaN Heterostructure Field-effect Transistors Related Books

Ambient Temperature Effects on the Performance of A1GaN/GaN Heterostructure Field-effect Transistors
Language: en
Pages: 138
Authors: Yang-An Tan
Categories: Microwave devices
Type: BOOK - Published: 2007 - Publisher:

DOWNLOAD EBOOK

The Effects of Temperature and Electron Radiation on the Electrical Properties of A1GaN/GaN Heterostructure Field Effect Transistors
Language: en
Pages: 104
Authors: Jeffrey T. Moran
Categories: Field-effect transistors
Type: BOOK - Published: 2009 - Publisher:

DOWNLOAD EBOOK

GaN heterostructure field effect transistors
Language: en
Pages:
Authors:
Categories:
Type: BOOK - Published: 1910 - Publisher:

DOWNLOAD EBOOK

A summary of the performance of AlGaN/GaN heterostructure field effect transistors on sapphire and SiC substrates are presented. High total power have been demo
HEMT Technology and Applications
Language: en
Pages: 246
Authors: Trupti Ranjan Lenka
Categories: Technology & Engineering
Type: BOOK - Published: 2022-06-23 - Publisher: Springer Nature

DOWNLOAD EBOOK

This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling an
Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors
Language: en
Pages: