Deep Level Defects in Electron-irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy
Author | : Michael R. Hogsed |
Publisher | : |
Total Pages | : 370 |
Release | : 2005 |
ISBN-10 | : OCLC:60684719 |
ISBN-13 | : |
Rating | : 4/5 ( Downloads) |
Book Synopsis Deep Level Defects in Electron-irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy by : Michael R. Hogsed
Download or read book Deep Level Defects in Electron-irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy written by Michael R. Hogsed and published by . This book was released on 2005 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: