Download or read book Deep Levels in Ion Implanted GaAs (Gallium Arsenide). written by and published by . This book was released on 1986 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: In summary, the DLTS measurements have not found any majority carrier traps with a concentration greater than 1x ten to the 13th power cc after annealing an implanted sample at 850 C The implanted and annealed samples were found to have the same minority carrier trap spectra as the capped and annealed control samples. The capping and annealing results point out the need to investigate other methods such as rapid thermal annealing and capless annealing in order to prevent surface damage on annealing.