Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation

Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation
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Book Synopsis Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation by :

Download or read book Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation written by and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: A new potential-induced degradation (PID) mechanism for c-Si is reported. Multiple characterization techniques in various aspects of a material's chemical, structural, electrical, and optoelectrical nature, as well as in atomic, nanometer, micrometer, millimeter, and cell and module scales, are combined. All results point consistently to a new discovery: substantial large-area deterioration of materials and junctions plays a major role.


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