Download or read book Si Atomic Layer Epitaxy Based on Si2H6 and Remote He Plasma Bombardment written by and published by . This book was released on 1992 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer Epitaxy (ALE) of Si has been demonstrated by using remote He plasma low energy ion bombardment to desorb H from a H-passivated Si(100) surface at low temperatures and subsequently chemisorbing Si2H6 on the surface in a self-limiting fashion. Si substrates were prepared using an RCA clean followed by a dilute HF dip to provide a clean, dihydride-terminated (1 x 1) surface, and were loaded into a Remote Plasma Chemical Vapor Deposition (RPCVD) system in which the substrate is downstream from an r-f noble gas(He or Ar) glow discharge in order to minimize plasma damage. An in situ remote H plasma clean at 250 deg C for 45 min. was used to remove surface 0 and C and provide an alternating monohydride and dihydride termination, as evidenced by a (3 x 1) RHEED pattern. It was found necessary to desorb the H from the Si surface to create adsorption sites for Si bearing species such as Si2H6. Remote He plasma bombardment for 1-3 min. was investigated over a range of temperatures (250 deg C-410 deg C), pressures (50-400 mTorr) and r-f powers (6-30 W) in order to desorb the H and convert the (3 x 1) RHEED pattern to a (2 x 1) pattern which is characteristic of either a monohydride termination or a bare Si surface.