Download or read book Antimonide-Based Long-Wavelength Lasers on GaAs Substrates written by and published by . This book was released on 2000 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have investigated the use of GaAsSb in edge-emitting laser active regions, in order to obtain lasing near 1.3 [mu]m. Single quantum well GaAsSb devices display electroluminescence at wavelengths as long as 1.34 [mu]m, but substantial blueshifts occur under high injection conditions. GaAsSb single quantum well edge emitters have been obtained which lase at 1.275 [mu]m with a room-temperature threshold current density as low as 535 A/cm2. Modification of the basic GaAsSb/GaAs structure with the addition of InGaAs layers results in a strongly type-II band alignment which can be used to further extend the emission wavelength of these devices. Using GaAsSb/InGaAs active regions, lasers emitting at 1.17 [mu]m have been obtained with room-temperature threshold current densities of 120 A/cm2, and devices operating at 1.29 [mu]m have displayed thresholds as low as 375 A/cm2. Characteristic temperatures for devices employing various GaAsSb-based active regions have been measured to be 60-73 K.