Download or read book Characterization and Modeling of Strained Si FET and GaN HEMT Devices written by Min Chu and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: Metal-oxide-semiconductor field-effect transistors (MOSFETs) have shown impressive performance improvements over the past 10 years by incorporating strained silicon (Si) technology. Concurrently, interest in alternate device structures and channel materials has been increasing tremendously because of the scaling limitations on performance enhancement. This work focuses on the impact of strain on state-of-the-art Si planar MOSFETs, Si tri-gate (TG) FinFETs, and GaN HEMT devices.