Deep Level Defects in Electron-irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy
| Author | : Michael R. Hogsed |
| Publisher | : |
| Total Pages | : 370 |
| Release | : 2005 |
| ISBN-10 | : OCLC:60684719 |
| ISBN-13 | : |
| Rating | : 4/5 ( Downloads) |
Book Synopsis Deep Level Defects in Electron-irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy by : Michael R. Hogsed
Download or read book Deep Level Defects in Electron-irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy written by Michael R. Hogsed and published by . This book was released on 2005 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
