Download or read book Deep Level Trap Spectroscopy of Gallium Arsenide written by Clarence E. Mayo and published by . This book was released on 1978 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: Trapping states in epitaxial GaAs induced by 1 MeV electron irradiation were measured by transient capacitance. N-type epitaxial GaAs samples with buffer layer were irradiated at room temperature with 1 MeV electrons, at doses ranging from 10 to the 14th power/sq.cm to 10 to the 16th power/sq.cm. Carrier removal, changes of concentration profile, diode behavior, and C-V characteristics were measured as a function of electron dose. Transient capacitance spectroscopy techniques were used to measure deep trapping levels between 4 K and 450 K. Concentrations of trapping states as a function of electron dose were measured and related to the carrier concentration measurements. The usual electron-induced trapping states with significant variations were noted. Variations of spatial depth of the traps as a function of irradiation and thermal cycling were observed. Samples were in the form of FET test patterns for correlation of material properties and device performance. (Author).