Download or read book Electrical Properties and Photoluminescence of Germanium-implanted Gallium Arsenide written by Siu Sing Chan and published by . This book was released on 1980 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: The data presented show that Ge-implanted GaAs has a complex amphoteric behavior which is controlled by the implantation dose, implantation temperature and anneal temperature. Annealing was performed with r.f. plasma deposited Si3N4 as the encapsulant. Implantations at -100 C resulted in p-layers while those performed at 100 C and above resulted in n-layers regardless of the dose and anneal temperature. Room temperature implants resulted in p- or n-layers depending on the combination of dose and anneal temperature. Electrical activation and carrier mobilities in the implanted layers were low. Low temperature (6 K) photoluminescence indicated that a significant amount of residual damage remained after annealing. Carrier concentration profiles in implanted layers and junction characteristics of Ge-implanted GaAs planar diodes are also presented. (Author).