Download or read book Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide written by Richard Dana Pashley and published by . This book was released on 1974 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: Part I: With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II: Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.