Download or read book Fabrication, Performance and Degradation Mechanism of Aluminum Gallium Nitride/gallium Nitride Heterostructure Field-effect Transistors written by Hyungtak Kim and published by . This book was released on 2003 with total page 133 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous efforts to realize the potential of Al-GaN/GaN HFETs have been made over the last decade focusing on improving microwave power performance via optimizing material growth and semiconductor processing technologies. As the device performance is getting mature, the device's reliability becomes a major concern for manufacturability of commercially available AlGaN/GaN HFETs. However, comprehensive study on the reliability of these devices is still lacking.