Growth and Evaluation of GaN on Si(111) Substrates Using Electron Cyclotron Resonance Plasma-assisted Molecular Beam Epitaxy

Growth and Evaluation of GaN on Si(111) Substrates Using Electron Cyclotron Resonance Plasma-assisted Molecular Beam Epitaxy
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Total Pages : 288
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ISBN-10 : OCLC:47944500
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Book Synopsis Growth and Evaluation of GaN on Si(111) Substrates Using Electron Cyclotron Resonance Plasma-assisted Molecular Beam Epitaxy by : Akira Ohtani

Download or read book Growth and Evaluation of GaN on Si(111) Substrates Using Electron Cyclotron Resonance Plasma-assisted Molecular Beam Epitaxy written by Akira Ohtani and published by . This book was released on 1999 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:


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This dissertation, "Molecular Beam Epitaxial Growth of GaN on Si(111) Substrate" by Zhongjie, Xu, 徐忠杰, was obtained from The University of Hong Kong (Pokf