High Electron Mobility Transistor Structures in the Gallium Arsenide and Gallium Nitride Material Systems by Organometallic Vapor Phase Epitaxy
Author | : Joseph Allen Smart |
Publisher | : |
Total Pages | : 548 |
Release | : 2006 |
ISBN-10 | : CORNELL:31924105483451 |
ISBN-13 | : |
Rating | : 4/5 ( Downloads) |
Book Synopsis High Electron Mobility Transistor Structures in the Gallium Arsenide and Gallium Nitride Material Systems by Organometallic Vapor Phase Epitaxy by : Joseph Allen Smart
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