Download or read book Radiation Effects on Gallium Arsenide Devices and Schottky Diodes written by Robert Harold Schnurr and published by . This book was released on 1968 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theory of operation of the Schottky barrier diode is reviewed, and complications caused by a more accurate space-charge formulation are discussed. Consideration is given to image effects, tunneling, interfacial dielectric layers, surface states, and minority carrier current. The interaction of ionizing radiation with semiconducting materials is reviewed, as is the behavior of a Schottky barrier diode in an ionizing radiation environment. The resultant model for the Schottky barrier diode is analogous to a p-n diode with a very high dopant concentration on one side. Tests were performed upon gallium arsenide (GaAs) and silicon Schottky barrier diodes, using a 2-Mev flash X-ray machine. The GaAs Schottky diodes were tested while functioning as an X-band detector and mixer. No permanent change was observed in the voltage-current or capacitance-voltage characteristics, or in the noise figure of the diodes after irradiation. Diodes fabricated from both types of material were also tested in a more conventional DC bias circuit.