Study of Growth and Characterization of Group III Nitride Semiconductor on Sapphire/LAO Substrate by RF Plasma-assisted Molecular Beam Epitaxy
| Author | : 謝佳和 |
| Publisher | : |
| Total Pages | : 122 |
| Release | : 2009 |
| ISBN-10 | : OCLC:727321198 |
| ISBN-13 | : |
| Rating | : 4/5 ( Downloads) |
Book Synopsis Study of Growth and Characterization of Group III Nitride Semiconductor on Sapphire/LAO Substrate by RF Plasma-assisted Molecular Beam Epitaxy by : 謝佳和
Download or read book Study of Growth and Characterization of Group III Nitride Semiconductor on Sapphire/LAO Substrate by RF Plasma-assisted Molecular Beam Epitaxy written by 謝佳和 and published by . This book was released on 2009 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
