Download or read book Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor written by Kenneth L. Holmes and published by . This book was released on 2002-06-01 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems. The Office of Naval Research (ONR) is funding research for the development of GaN- based microwave power amplifiers for use in future radar and communication systems. This thesis studies the effects of AIGaN/GaN HEMTs' polarization, piezoelectric (PZ) and spontaneous, properties utilizing the TM commercially available Silvaco Atlas software for modeling and simulation. The polarization properties are suspected to enhance the two-dimensional electron gas (2DEG) at the AIGaN/GaN interface.